Semiconductores Diodos de alto voltaje, Rectificadores, Condensadores ceramicos de alto voltaje, Varistores, Supresores, Diseño de Semiconductores...

CKT12H8B1E

Specifications

Specification Conditions Value
TC 100 °C
Rø(JC) 1.25 °C / W
Package Style TO-247
VCES 1200 V
IC At TC (Case Temperature) 7.9 A
VCE(SAT) 3.6 V
ETS 1 mJ
VCC With Inductive Load (IC) @ 25 °C 800 V
RG With Inductive Load (IC) @ 25 °C 47

Notes

  • Current ratings require assembly on a suitably engineered heatsink, using a quality heat coupling compound.
  • Data for all device parameters taken at 25˚C unless otherwise noted.
  • Additional devices available on special request. Contact the factory.

Consúltenos

Compnentes electrónica de potencia CKE Distronica